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ELECTROSTATIC FREE-FREE BEAM MICROELECTROMECHANICAL RESONATOR

dc.contributor.authorZhang, Tianming
dc.contributor.copyright-releaseNot Applicableen_US
dc.contributor.degreeMaster of Applied Scienceen_US
dc.contributor.departmentDepartment of Electrical & Computer Engineeringen_US
dc.contributor.ethics-approvalNot Applicableen_US
dc.contributor.external-examinern/aen_US
dc.contributor.graduate-coordinatorDr. Jacek Ilowen_US
dc.contributor.manuscriptsNot Applicableen_US
dc.contributor.thesis-readerDr. Kamal El-Sankary, Dr. William Phillipsen_US
dc.contributor.thesis-supervisorDr. Yuan Ma, Dr. Zhizhang (David) Chenen_US
dc.date.accessioned2012-11-15T15:25:07Z
dc.date.available2012-11-15T15:25:07Z
dc.date.defence2012-10-31
dc.date.issued2012-11-15
dc.description.abstractSeveral free-free beam micro-resonators are designed and fabricated using two commercially available surface micromachining processes, the UW-MEMS process and PolyMUMPs. Theoretical derivations of the design parameters are presented and an electrical lumped behavior model is developed for a single resonator with direct mechanic-to-electric analogy. A finite-element analysis (FEA) tool, the COMSOL Multiphysics 4.2a, is utilized to simulate the effects of the critical structural dimensions and electromechanical coupling. A variety of analyses, such as modal, static and dynamic responses are performed in FEA and the results are compared with the analytical solutions. The static and dynamic performances of the fabricated UW-MEMS resonators are tested using the Vecco NT-9100 In-Motion System. The electrical testing is carried out to obtain the frequency characteristics in electrical domain of the device. Measured data are compared with the analytical and simulation results. Discrepancies are discussed and analyzed.en_US
dc.identifier.urihttp://hdl.handle.net/10222/15700
dc.language.isoenen_US
dc.subjectMEMS, Free-Free Beam, Resonator, Electrostatic, FEA, Dynamicen_US
dc.titleELECTROSTATIC FREE-FREE BEAM MICROELECTROMECHANICAL RESONATORen_US
dc.typeThesisen_US

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