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dc.contributor.authorTso, H. C. W.en_US
dc.contributor.authorGeldart, D. J. W.en_US
dc.contributor.authorVasilopoulos, P.en_US
dc.date.accessioned2013-06-19T17:26:24Z
dc.date.available2013-06-19T17:26:24Z
dc.date.issued1998-03/15en_US
dc.identifier.citationTso, H. C. W., D. J. W. Geldart, and P. Vasilopoulos. 1998. "Negative electron-electron drag between narrow quantum Hall channels." Physical Review B (Condensed Matter) 57(11): 6561-5. Copyright © 1998 American Physical Society.en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.57.6561en_US
dc.identifier.urihttp://hdl.handle.net/10222/25049
dc.description.abstractMomentum transfer due to Coulomb interaction between two parallel, two-dimensional, narrow, and spatially separated layers, when a current Idrive is driven through one layer, is studied in the presence of a perpendicular magnetic field B. The current induced in the drag layer Idrag is evaluated self-consistently with Idrive as a parameter. Idrag can be positive or negative depending on the value of the filling factor N of the highest occupied bulk Landau level (LL). For a fully occupied LL, Idrag is negative, (i.e., it flows opposite to Idrive), whereas it is positive for a half-filled LL. When the circuit is opened in the drag layer, a voltage Vdrag develops in it; it is negative for a half-filled LL and positive for a fully occupied LL. This positive Vdrag expressing a negative Coulomb drag, results from energetically favored near-edge inter-LL transitions that occur when the highest occupied bulk LL and the LL just above it become degenerateen_US
dc.publisherAPS through AIPen_US
dc.relation.ispartofPhysical Review B (Condensed Matter)en_US
dc.subjectLandau levelsen_US
dc.subjectQuantum Hall effecten_US
dc.titleNegative electron-electron drag between narrow quantum Hall channelsen_US
dc.typearticleen_US
dc.identifier.volume57en_US
dc.identifier.issue11en_US
dc.identifier.startpage6561en_US
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