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dc.contributor.authorVaz, Eduardoen_US
dc.contributor.authorKyriakidis, Jordanen_US
dc.date.accessioned2013-06-19T15:27:29Z
dc.date.available2013-06-19T15:27:29Z
dc.date.issued2008en_US
dc.identifier.citationReproduced from Vaz, Eduardo, and Jordan Kyriakidis. 2008. "Dark channels in resonant tunneling transport through artificial atoms." Journal of Chemical Physics 129(2), with the permission of AIP Publishingen_US
dc.identifier.issn00219606en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2949510en_US
dc.identifier.urihttp://hdl.handle.net/10222/24290
dc.description.abstractWe investigate sequential tunneling through a multilevel quantum dot confining multiple electrons in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime. 2008 American Institute of Physics.en_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.ispartofJournal of Chemical Physicsen_US
dc.subjectQuantum chemistryen_US
dc.subjectAtomsen_US
dc.subjectCrystallographyen_US
dc.subjectExcavationen_US
dc.subjectOptical waveguidesen_US
dc.subjectQuantum electronicsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectTunneling (excavation)en_US
dc.subjectWindowsen_US
dc.titleDark channels in resonant tunneling transport through artificial atomsen_US
dc.typearticleen_US
dc.identifier.volume129en_US
dc.identifier.issue2en_US
dc.identifier.startpageen_US
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