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dc.contributor.authorHill, IGen_US
dc.contributor.authorMcLean, ABen_US
dc.date.accessioned2013-06-19T15:24:37Z
dc.date.available2013-06-19T15:24:37Z
dc.date.issued1999-03en_US
dc.identifier.citationHill, IG, and AB McLean. 1999. "Strongly anisotropic band dispersion of an image state located above metallic nanowires." Physical Review Letters 82(10): 2155-2158. doi:10.1103/PhysRevLett.82.2155en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.82.2155en_US
dc.identifier.urihttp://hdl.handle.net/10222/24170
dc.description.abstractIndium can be grown on Si(111) in a 4 x I pattern that contains rows of In atoms spaced 13.3 Angstrom apart that have quasi-one-dimensional electronic structure. This ordered array of metallic wires produces an image-induced surface state series. We have measured the dispersion of the most tightly bound (n = 1) image state band and found it to be unconventional because it falls below the free electron parabola perpendicular to the In atom rows. The most straightforward explanation for this is that the electrons feel the surface corrugation potential produced by the rows of In atoms. We were able to infer the form of the potential from our measurements.en_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.titleStrongly anisotropic band dispersion of an image state located above metallic nanowiresen_US
dc.typearticleen_US
dc.identifier.volume82en_US
dc.identifier.issue10en_US
dc.identifier.startpage2155en_US
dc.rights.holder©1999 American Physical Society
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