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Magnetoresistance and magnetic properties of Fe/Cu/Fe/GaAs(100)

Date

1999-10/01

Authors

Monchesky, T. L.
Heinrich, B.
Urban, R.
Myrtle, K.
Klaua, M.
Kirschner, J.

Journal Title

Journal ISSN

Volume Title

Publisher

APS through AIP

Abstract

A procedure for growth of smooth As free Fe surfaces on (46)-GaAs(100) is presented. Ferromagnetic resonance (FMR) revealed that the Fe films have anisotropies equal to bulk Fe, modified only by interface anisotropies. The Fe films served as templates for the growth of epitaxial Fe/Cu/Fe trilayers which were subsequently characterized by FMR, magneto-optical Kerr effect, and magnetoresistance. At room temperature, films coupled through a 13.2-ML Cu spacer exhibited 2.0% giant magnetoresistance and 0.3% anisotropic magnetoresistance. The results showed that the interlayer exchange coupling for a 13.2-ML Cu spacer could not be described by bilinear and biquadratic contributions alone. A different coupling, which varied as cosine cubed of the angle between the magnetizations of the Fe films, was required to explain the data (bicubic exchange coupling)

Description

Keywords

Copper, Ferromagnetic materials, Ferromagnetic resonance, Gallium arsenide, III-V semiconductors, Interface roughness, Iron, Kerr magneto-optical effect, Magnetic anisotropy, Magnetic multilayers, Magnetoresistance

Citation

Monchesky, T. L., B. Heinrich, R. Urban, K. Myrtle, et al. 1999. "Magnetoresistance and magnetic properties of Fe/Cu/Fe/GaAs(100)." Physical Review B (Condensed Matter) 60(14): 10242-51. doi:10.1103/PhysRevB.60.10242

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