Magnetoresistance and magnetic properties of Fe/Cu/Fe/GaAs(100)
Date
1999-10/01
Authors
Monchesky, T. L.
Heinrich, B.
Urban, R.
Myrtle, K.
Klaua, M.
Kirschner, J.
Journal Title
Journal ISSN
Volume Title
Publisher
APS through AIP
Abstract
A procedure for growth of smooth As free Fe surfaces on (46)-GaAs(100) is presented. Ferromagnetic resonance (FMR) revealed that the Fe films have anisotropies equal to bulk Fe, modified only by interface anisotropies. The Fe films served as templates for the growth of epitaxial Fe/Cu/Fe trilayers which were subsequently characterized by FMR, magneto-optical Kerr effect, and magnetoresistance. At room temperature, films coupled through a 13.2-ML Cu spacer exhibited 2.0% giant magnetoresistance and 0.3% anisotropic magnetoresistance. The results showed that the interlayer exchange coupling for a 13.2-ML Cu spacer could not be described by bilinear and biquadratic contributions alone. A different coupling, which varied as cosine cubed of the angle between the magnetizations of the Fe films, was required to explain the data (bicubic exchange coupling)
Description
Keywords
Copper, Ferromagnetic materials, Ferromagnetic resonance, Gallium arsenide, III-V semiconductors, Interface roughness, Iron, Kerr magneto-optical effect, Magnetic anisotropy, Magnetic multilayers, Magnetoresistance
Citation
Monchesky, T. L., B. Heinrich, R. Urban, K. Myrtle, et al. 1999. "Magnetoresistance and magnetic properties of Fe/Cu/Fe/GaAs(100)." Physical Review B (Condensed Matter) 60(14): 10242-51. doi:10.1103/PhysRevB.60.10242