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Spectrally-Resolved Differential Reflectivity Response of GaMnAs

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dc.contributor.authorde Boer, Tristan
dc.contributor.copyright-releaseNot Applicableen_US
dc.contributor.degreeMaster of Scienceen_US
dc.contributor.departmentDepartment of Physics & Atmospheric Scienceen_US
dc.contributor.ethics-approvalNot Applicableen_US
dc.contributor.external-examinerNot Applicableen_US
dc.contributor.graduate-coordinatorRandall Martinen_US
dc.contributor.manuscriptsNot Applicableen_US
dc.contributor.thesis-readerTheodore Moncheskyen_US
dc.contributor.thesis-readerJordan Kyriakidisen_US
dc.contributor.thesis-supervisorKimberley Hallen_US
dc.date.accessioned2011-09-07T17:34:47Z
dc.date.available2011-09-07T17:34:47Z
dc.date.defence2011-08-26
dc.date.issued2011-09-07
dc.descriptionSpectrally-resolved differential reflectivity experiments on GaMnAs over a broad spectral range (1.4-2.0 eV) are presented, representing the first such measurements in a III-Mn-V diluted magnetic semiconductor. Comparison of the measured nonlinear spectra with results in GaAs and LT-GaAs, together with calculations of the pump probe signal contributions, has allowed an unambiguous identification of the relevant scattering and relaxation processes for optically-excited carriers in this material system. The measured spectra indicate a clear blue shift in the nonlinear optical response, providing support for the valence band model of ferromagnetism in III-Mn-V diluted magnetic semiconductors.en_US
dc.description.abstractSpectrally-resolved differential reflectivity experiments on GaMnAs over a broad spectral range (1.4-2.0 eV) are presented, representing the first such measurements in a III-Mn-V diluted magnetic semiconductor. Comparison of the measured nonlinear spectra with results in GaAs and LT-GaAs, together with calculations of the pump probe signal contributions, has allowed an unambiguous identification of the relevant scattering and relaxation processes for optically-excited carriers in this material system. The measured spectra indicate a clear blue shift in the nonlinear optical response, providing support for the valence band model of ferromagnetism in III-Mn-V diluted magnetic semiconductors.en_US
dc.identifier.urihttp://hdl.handle.net/10222/14253
dc.language.isoenen_US
dc.subjectDifferential Reflectionen_US
dc.subjectdilute magnetic semiconductoren_US
dc.subjectdiluted magnetic semiconductoren_US
dc.subjectdynamicsen_US
dc.subjectferromagnetismen_US
dc.subjectGaAsen_US
dc.subjectGaMnAsen_US
dc.subjectsemiconductoren_US
dc.subjectcarrier dynamicsen_US
dc.subjectUltrafast Spectroscopyen_US
dc.titleSpectrally-Resolved Differential Reflectivity Response of GaMnAsen_US

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