TRANSIT AND DC MODEL OF FLOATING GATE TRANSISTOR IN 90NM CMOS TECHNOLOGY

Abstract

This thesis presents a new simulation model for floating gate transistor (FGMOS) in nanometer scale technology where the transistors suffer from non-negligible gate leakage current due to the very thin Silicon oxide (SiO2) layer. The new FGMOS simulation model is used for transient and DC simulation and with any industry standard simulators such as Spector and various SPICE programs (i.e. HSPICE, WinSPICE, etc.). This model can be used for any technology that has SiO2 thickness less than 3nm and suffer from gate leakage current with no changes to the model itself; however, minimal changes need to be done to the gate tunnelling cell to comply with the technology parameters where the gate tunnelling current exponentially increases as tox decreases.