Observation of the fundamental exciton in low-temperature grown GaAs using four-wave mixing spectroscopy

Abstract

The nonlinear optical response of low-temperature (LT) grown GaAs were studied using four-wave mixing techniques. Through measurements of the four-wave mixing response as a function of pulse delay and photon energy, a strong optical response was identi ed associated with the fundamental band gap exciton. These experiments therefore demonstrated the importance of the exciton in understanding the ultrafast nonlinear optical response of LT-GaAs despite the absence of any evidence of the exciton in past linear absorption studies in this material. Measurement of the fourwave mixing response as a function of pulse delay and the polarization states of the two excitation pulses shows that the dominant contribution to the exciton signal is tied to excitation-induced dephasing. Four-wave mixing experiments in which the sample is exposed to an additional laser pulse indicate that the exciton signal may be strongly diminished due to a combination of screening and a reduction in the total dephasing time. The short temporal duration of the above e ect provides evidence of an ultrashort (< 100 fs) electron trapping time in this system tied to arsenic related defects introduced during low-temperature growth. These ndings are of importance to the understanding of the optical properties of LT-GaAs and will aid in the development of optoelectronic devices using this material system.