Magnetic properties of Co/GaAs(110)
Monchesky, T. L.
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We observed three magnetic states of an ultrathin, atomically well-ordered Co film grown on a cleaved GaAs(110) substrate. For a Co thickness less than 3.4 monolayers (ML), we find a ferromagnetically dead layer associated with the formation of interfacial Co2GaAs. For thicknesses greater than 4.1 ML, the Co film grows with a bcc structure that contains 6 at. % Ga. The films are ferromagnetic with an easy axis along the 110] direction. This magnetic state persists up to a thickness of 7 ML, at which point an abrupt in-plane spin-reorientation transition reorients the magnetization along the 001] direction
Monchesky, T. L., and J. Unguris. 2006. "Magnetic properties of Co/GaAs(110)." Physical Review B (Condensed Matter and Materials Physics) 74(24): 241301-1. doi:10.1103/PhysRevB.74.241301