| dc.contributor.author | Monchesky, T. L. | en_US |
| dc.contributor.author | Unguris, J. | en_US |
| dc.date.accessioned | 2013-06-19T17:21:15Z | |
| dc.date.available | 2013-06-19T17:21:15Z | |
| dc.date.issued | 2006-12/15 | en_US |
| dc.identifier.citation | Monchesky, T. L., and J. Unguris. 2006. "Magnetic properties of Co/GaAs(110)." Physical Review B (Condensed Matter and Materials Physics) 74(24): 241301-1. doi:10.1103/PhysRevB.74.241301 | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.74.241301 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10222/24566 | |
| dc.description.abstract | We observed three magnetic states of an ultrathin, atomically well-ordered Co film grown on a cleaved GaAs(110) substrate. For a Co thickness less than 3.4 monolayers (ML), we find a ferromagnetically dead layer associated with the formation of interfacial Co2GaAs. For thicknesses greater than 4.1 ML, the Co film grows with a bcc structure that contains 6 at. % Ga. The films are ferromagnetic with an easy axis along the 110] direction. This magnetic state persists up to a thickness of 7 ML, at which point an abrupt in-plane spin-reorientation transition reorients the magnetization along the 001] direction | en_US |
| dc.publisher | APS through AIP | en_US |
| dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | en_US |
| dc.subject | Cobalt | en_US |
| dc.subject | Ferromagnetic materials | en_US |
| dc.subject | Magnetic thin films | en_US |
| dc.subject | Magnetisation | en_US |
| dc.subject | Metallic thin films | en_US |
| dc.title | Magnetic properties of Co/GaAs(110) | en_US |
| dc.type | article | en_US |
| dc.identifier.volume | 74 | en_US |
| dc.identifier.issue | 24 | en_US |
| dc.identifier.startpage | 241301 | en_US |
| dc.rights.holder | ©2006 American Physical Society | |
