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Strongly anisotropic band dispersion of an image state located above metallic nanowires
(1999-03)
Indium can be grown on Si(111) in a 4 x I pattern that contains rows of In atoms spaced 13.3 Angstrom apart that have quasi-one-dimensional electronic structure. This ordered array of metallic wires produces an image-induced ...
A comparison of two high performance inverse photoemission bandpass detectors
(1998-01)
No abstract available.
Detection of a Fermi level crossing in three-domain Si(111)-In(4x1)
(1999-04)
Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6 azimuth of the 1 x I zone, which ...
Metallicity of In chains on Si(111)
(1997-12)
No abstract available.
Role of Si adatoms in the Si(111)-Au(5x2) quasi-one-dimensional system
(1997-06)
No abstract available.