Kahwaji, S.Gordon, R. A.Crozier, E. D.Monchesky, T. L.2013-06-192013-06-192012-01/01Kahwaji, S., R. A. Gordon, E. D. Crozier, and T. L. Monchesky. 2012. "Local structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001)." Physical Review B (Condensed Matter and Materials Physics) 85(1): 0144059. doi:10.1103/PhysRevB.85.0144051098-0121http://dx.doi.org/10.1103/PhysRevB.85.014405http://hdl.handle.net/10222/24553The structural and magnetic properties of ultrathin Mn layers deposited onto Si(001) by molecular beam epitaxy at low temperature are reported. X-ray absorption fine structure studies reveal that the structure of the silicide layer that forms depends on the growth temperature of the capping layer. A capping layer grown at 200C on 0.35-monolayer (ML) Mn results in a metastable MnSi phase with a B2-like (CsCl) structure, whereas a cap grown at room temperature on 0.5 ML followed by annealing at 200C produces a lower coordinated MnSi phase with a B20-like structure. Increasing the Mn thickness from 0.5 to 4 monolayers does not trigger a structural transformation but drives the structure closer to MnSi-B20. The sample with B2-like structure has the largest Mn magnetic moment of 0.33 B/Mn at T= 2 K, and a Curie temperature TC above 250 K. MnSi-B20 layers showed lower moments and much lower TC's, in line with those reported for MnSi-B20 thin films.Curie temperatureMagnetic annealingMagnetic epitaxial layersMagnetic momentsMagnetic structureManganeseMetallic epitaxial layersMolecular beam epitaxial growthMonolayersSolid-state phase transformationsX-ray absorptionLocal structure and magnetic properties of B2- and B20-like ultrathin Mn films grown on Si(001)article8510144059©2012 American Physical Society