Geldart, D. J. W.Neilson, D.2013-06-192013-06-192003-01/15Geldart, D. J. W., and D. Neilson. 2003. "Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions." Physical Review B (Condensed Matter and Materials Physics) 67(4): 45310-1. Copyright © 2003 American Physical Society.0163-1829http://dx.doi.org/10.1103/PhysRevB.67.045310http://hdl.handle.net/10222/25106The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenonBifurcationElectron densityElectron-hole recombinationExchange interactions (electron)Gallium arsenideIII-V semiconductorsMetal-insulator transitionTwo-dimensional electron gasarticle67445310