de Boer, Tristan2011-09-072011-09-072011-09-07http://hdl.handle.net/10222/14253Spectrally-resolved differential reflectivity experiments on GaMnAs over a broad spectral range (1.4-2.0 eV) are presented, representing the first such measurements in a III-Mn-V diluted magnetic semiconductor. Comparison of the measured nonlinear spectra with results in GaAs and LT-GaAs, together with calculations of the pump probe signal contributions, has allowed an unambiguous identification of the relevant scattering and relaxation processes for optically-excited carriers in this material system. The measured spectra indicate a clear blue shift in the nonlinear optical response, providing support for the valence band model of ferromagnetism in III-Mn-V diluted magnetic semiconductors.Spectrally-resolved differential reflectivity experiments on GaMnAs over a broad spectral range (1.4-2.0 eV) are presented, representing the first such measurements in a III-Mn-V diluted magnetic semiconductor. Comparison of the measured nonlinear spectra with results in GaAs and LT-GaAs, together with calculations of the pump probe signal contributions, has allowed an unambiguous identification of the relevant scattering and relaxation processes for optically-excited carriers in this material system. The measured spectra indicate a clear blue shift in the nonlinear optical response, providing support for the valence band model of ferromagnetism in III-Mn-V diluted magnetic semiconductors.enDifferential Reflectiondilute magnetic semiconductordiluted magnetic semiconductordynamicsferromagnetismGaAsGaMnAssemiconductorcarrier dynamicsUltrafast Spectroscopy