Tso, H. C. W.Geldart, D. J. W.Vasilopoulos, P.2013-06-192013-06-191998-03/15Tso, H. C. W., D. J. W. Geldart, and P. Vasilopoulos. 1998. "Negative electron-electron drag between narrow quantum Hall channels." Physical Review B (Condensed Matter) 57(11): 6561-5. Copyright © 1998 American Physical Society.0163-1829http://dx.doi.org/10.1103/PhysRevB.57.6561http://hdl.handle.net/10222/25049Momentum transfer due to Coulomb interaction between two parallel, two-dimensional, narrow, and spatially separated layers, when a current Idrive is driven through one layer, is studied in the presence of a perpendicular magnetic field B. The current induced in the drag layer Idrag is evaluated self-consistently with Idrive as a parameter. Idrag can be positive or negative depending on the value of the filling factor N of the highest occupied bulk Landau level (LL). For a fully occupied LL, Idrag is negative, (i.e., it flows opposite to Idrive), whereas it is positive for a half-filled LL. When the circuit is opened in the drag layer, a voltage Vdrag develops in it; it is negative for a half-filled LL and positive for a fully occupied LL. This positive Vdrag expressing a negative Coulomb drag, results from energetically favored near-edge inter-LL transitions that occur when the highest occupied bulk LL and the LL just above it become degenerateLandau levelsQuantum Hall effectarticle57116561