Monchesky, T. L.Unguris, J.2013-06-192013-06-192006-12/15Monchesky, T. L., and J. Unguris. 2006. "Magnetic properties of Co/GaAs(110)." Physical Review B (Condensed Matter and Materials Physics) 74(24): 241301-1. doi:10.1103/PhysRevB.74.2413011098-0121http://dx.doi.org/10.1103/PhysRevB.74.241301http://hdl.handle.net/10222/24566We observed three magnetic states of an ultrathin, atomically well-ordered Co film grown on a cleaved GaAs(110) substrate. For a Co thickness less than 3.4 monolayers (ML), we find a ferromagnetically dead layer associated with the formation of interfacial Co2GaAs. For thicknesses greater than 4.1 ML, the Co film grows with a bcc structure that contains 6 at. % Ga. The films are ferromagnetic with an easy axis along the 110] direction. This magnetic state persists up to a thickness of 7 ML, at which point an abrupt in-plane spin-reorientation transition reorients the magnetization along the 001] directionCobaltFerromagnetic materialsMagnetic thin filmsMagnetisationMetallic thin filmsarticle7424241301©2006 American Physical Society