| dc.contributor.author | Hill, IG | en_US |
| dc.contributor.author | McLean, AB | en_US |
| dc.date.accessioned | 2013-06-19T15:24:37Z | |
| dc.date.available | 2013-06-19T15:24:37Z | |
| dc.date.issued | 1999-04 | en_US |
| dc.identifier.citation | Hill, IG, and AB McLean. 1999. "Detection of a Fermi level crossing in three-domain Si(111)-In(4x1)." Physical Review B 59(15): 9791-9793. doi:10.1103/PhysRevB.59.9791 | en_US |
| dc.identifier.issn | 0163-1829 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.59.9791 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10222/24168 | |
| dc.description.abstract | Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6 azimuth of the 1 x I zone, which is coincident with the azimuth of the 4 X 1 zone, with inverse photoemission, and found a Fermi level crossing at approximate to 0.6. We have now detected Fermi level crossings in both single and three domain 4X1 overlayers. [S0163-1829(99)10415-6]. | en_US |
| dc.relation.ispartof | Physical Review B | en_US |
| dc.title | Detection of a Fermi level crossing in three-domain Si(111)-In(4x1) | en_US |
| dc.type | article | en_US |
| dc.identifier.volume | 59 | en_US |
| dc.identifier.issue | 15 | en_US |
| dc.identifier.startpage | 9791 | en_US |
| dc.rights.holder | ©1999 The American Physical Society | |
