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dc.contributor.authorObrovac, MN
dc.contributor.authorCao, Yidan
dc.contributor.authorDunlap, R. A.
dc.date.accessioned2022-08-15T14:42:51Z
dc.date.available2022-08-15T14:42:51Z
dc.date.issued2020-06-30
dc.identifier.citationYidan Cao, R. Dunlap, and M. N. Obrovac. Electrochemistry and Thermal Behavior of SiOx Made by Reactive Gas Milling. J. Electrochem. Soc. (2020), 167 (11), 110501.en_US
dc.identifier.urihttp://hdl.handle.net/10222/81844
dc.description.abstractSiOx with various oxygen contents were synthesized from Si powder by a simple room-temperature ball milling method by controlling the air exposure time during milling. The resulting SiOx consists of nano and amorphous Si dispersed in an amorphous silicon oxide matrix. The oxygen saturated composition of SiO0.37 is thermally stable up to 800 °C and has improved cycling performance after annealing. The 1st irreversible capacity is reduced by high temperature annealing due to defect healing, while the high reversible capacity (1500–2000 mAh g−1 or 1600–1800 Ah l−1) is well maintained. This work demonstrates the thermal properties of SiOx made by reactive gas milling and how internal defects directly influence its electrochemistry.en_US
dc.publisherThe Electrochemical Societyen_US
dc.relation.ispartofJournal of The Electrochemical Societyen_US
dc.titleElectrochemistry and Thermal Behavior of SiOx Made by Reactive Gas Millingen_US
dc.typeArticleen_US
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