| dc.contributor.author | Konenkamp, R. | en_US |
| dc.contributor.author | Word, Robert C. | en_US |
| dc.contributor.author | Schlegel, C. | en_US |
| dc.date.accessioned | 2014-03-03T20:07:56Z | |
| dc.date.available | 2014-03-03T20:07:56Z | |
| dc.date.issued | 2004 | en_US |
| dc.identifier.citation | Konenkamp, R., Robert C. Word, and C. Schlegel. 2004. "Vertical nanowire light-emitting diode." Applied Physics Letters 85(24): 6004-6006. | en_US |
| dc.identifier.issn | 00036951 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1836873 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10222/45136 | |
| dc.description.abstract | We report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on SnO2 -coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent SnO2 layer, while hole injection is mediated by a p -doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h. 2004 American Institute of Physics. | en_US |
| dc.publisher | American Institute of Physics Inc | en_US |
| dc.relation.ispartof | Applied Physics Letters | en_US |
| dc.title | Vertical nanowire light-emitting diode | en_US |
| dc.type | article | en_US |
| dc.identifier.volume | 85 | en_US |
| dc.identifier.issue | 24 | en_US |
| dc.identifier.startpage | 6004 | en_US |
